HI-SINCERITY MICROELECTRONICS CORP.
HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Spec.
No.
: HE6009 Issued Date : 1996.
02.
03 Revised Date :2008.
04.
09 Page No.
: 1/5 Description TO-252 The HJ122 is designed for use in general purposes and low speed switching applications.
Darlington Schematic C Features • High DC current gain • Built-in a damper diode at E-C Absolute Maximum Ratings (TA=25°C) B R1 R2 E • Maximum Temperatures Storage Temperature .
.
-55 ~ +150 °C Junction Temperature .
.
.
...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)