Part Number
|
WFW20N50 |
Manufacturer
|
Wisdom |
Description
|
N-Channel MOSFET |
Published
|
Dec 13, 2013 |
Detailed Description
|
Wisdom Semiconductor
WFW20N50
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 0.26 Ω )@VGS=10V Gate Charge (Typical ...
|
Datasheet
|
WFW20N50
|
Overview
Wisdom Semiconductor
WFW20N50
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 0.
26 Ω )@VGS=10V Gate Charge (Typical 90nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
Symbol
◀
{
2.
Drain
●
1.
Gate {
▲
● ●
{
3.
Source
General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TO-...
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