PD - 90614
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET
TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRFAE30 BVDSS 800V RDS(on) 3.
2Ω ID 3.
1Α
IRFAE30 800V, N-CHANNEL
The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET
transistors.
The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET
transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of...