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Part Number
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TSM12N65 |
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Manufacturer
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Taiwan Semiconductor |
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Description
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650V N-Channel Power MOSFET |
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Published
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Jan 4, 2014 |
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Detailed Description
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TSM12N65
650V N-Channel Power MOSFET
ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
650
RD...
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Datasheet
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TSM12N65
|
Overview
TSM12N65
650V N-Channel Power MOSFET
ITO-220
Pin Definition: 1.
Gate 2.
Drain 3.
Source
PRODUCT SUMMARY VDS (V)
650
RDS(on)(Ω)
0.
8 @ VGS =10V
ID (A)
6
General Description
The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
● ● ● ● Low RDS(ON) 0.
68Ω (Typ.
) Low gate charge typical @ 41nC (Typ.
) Low Crss typical @ 14.
6pF (Typ.
) Fast Switching
Block Diagram
Ordering Information
Part No.
TSM12N65CI C0
Package
ITO-220
Packing
50pcs / Tube ...
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