AOW11N60 600V,11A N-Channel MOSFET General Description The AOW11N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 700V@150℃ 11A 0.
7Ω 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View D G D S S D G G S AOW11N60 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Co...

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