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IPD80P03P4L-07

Part Number IPD80P03P4L-07
Manufacturer Infineon
Description Power-Transistor
Published Jan 13, 2014
Detailed Description IPD80P03P4L-07 OptiMOS®-P2 Power-Transistor Product Summary V DS R DS(on) ID -30 6.8 -80 V mΩ A Features • P-channel ...
Datasheet IPD80P03P4L-07





Overview
IPD80P03P4L-07 OptiMOS®-P2 Power-Transistor Product Summary V DS R DS(on) ID -30 6.
8 -80 V mΩ A Features • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested • Intended for reverse battery protection PG-TO252-3-11 Type IPD80P03P4L-07 Package PG-TO252-3-11 Marking 4P03L07 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25°C, V GS=-10V1) T C=100°C, V GS=-10V2) Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage Power dissipation Operating an...






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