MEM2309
P-Channel MOSFET MEM2309S Descriptionÿ
MEM2309SGSeries P-channel enhancement mode field-effect
transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.
This device particularly suits low voltage applications, and low power dissipation.
Featureÿ
l -30V/-6A RDS(ON) =53m Ω@ VGS=-10V,ID=-6A RDS(ON) =68mΩ@ VGS=-4.
5V,ID=-4A High Density Cell Design For Ultra Low On-Resistance Surface mount package:SOP8
l l
Pin Configurationÿ
Typical Application:
l l l Power management Load switch Battery protection
m
ρW
3V
Ϋm
w`R
•yΡ
b€
Absolute Maximum Ratings:
Parameter Drain-Source Voltage Gate-Source Voltage TA=25! Drain C...