PD - 97289
IRG4PC20UPbF
PROVISIONAL
UltraFast Speed IGBT
INSULATED GATE BIPOLAR
TRANSISTOR
Features
UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, 200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package Lead-Free
C
VCES = 600V
G E
VCE(on) typ.
= 1.
85V
@VGE = 15V, IC = 6.
5A
n-channel
C E C G TO-247AC
Benefits
Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
G Gate
Absolute Maximum...