D56/ www.
daysemi.
jp N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES ID (A) 40 rDS(on) (W) 0.
016 @ VGS = 10 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested TO-252 D G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.
1 mH TC = 25_C TA = 25_C TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IS IAR ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)