ST 2SD882U-P
NPN SILICON EPITAXIAL POWER
TRANSISTOR
These devices are intended for use in medium power linear and switching applications
TO-126 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation at TA = 25 OC Power Dissipation at TC = 25 OC Operating and Storage Temperature Range
Symbol VCBO VCES VCEO VEBO IC ICM IB PD PD TS
Value 120 100 100 6 4 7 1 1.
25 36 - 65 to + 150
Unit V V V V A A A mW mW
O
C
Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 500 mA at VCE = 1 V, IC = 2 A at ...