ST 2SD965
NPN Silicon Epitaxial Planar
Transistor for low-frequency power and stroboscope applications.
The
transistor is subdivided into three groups P, Q and R, according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
Features ․Low collector-emitter saturation voltage ․Satisfactory operation performances at high
efficiency with the low voltage power supply TO-92 Plastic Package Weight approx.
0.
19g
Absolute Maximum Ratings (Ta=25oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Peak Collector Current Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCE...