SEMICONDUCTOR
TECHNICAL DATA
General Description
It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications
E A
KMB050N60PA
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
O C F G B Q
DIM MILLIMETERS _ 0.
2 9.
9 + A B C D E
FEATURES
VDSS= 60V, ID= 50A Drain-Source ON Resistance : RDS(ON)=18m (Max.
) @VGS = 10V
D I K M L
P
F G H
J H
I J K L M N O
15.
95 MAX 1.
3+0.
1/-0.
05 _ 0.
1 0.
8 + _ 0.
2 3.
6 + _ 0.
1 2.
8 + 3.
7 0.
5+0.
1/-0.
05 1.
5 _ 0.
3 13.
08 + 1.
46 _ 0.
1 1.
4 + _ 0.
1 1.
27 + _ 0.
2 2.
54 + _ 0.
2 4.
5 + _ 0.
2 2.
4 + _ 0.
2 9.
2 +
MOSFET MAXIMUM RATING (Ta=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current P...