2SK3911
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI)
2SK3911
Switching
Regulator Applications
Unit: mm
• Small gate charge: Qg = 60 nC (typ.
) • Low drain-source ON resistance: RDS (ON) = 0.
22 Ω (typ.
) • High forward transfer admittance: |Yfs| = 11 S (typ.
) • Low leakage current: IDSS = 500 μA (VDS = 600 V) • Enhancement model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Rep...