Part Number
|
FDA2712 |
Manufacturer
|
Fairchild Semiconductor |
Description
|
N-Channel UltraFET Trench MOSFET |
Published
|
Jan 29, 2014 |
Detailed Description
|
FDA2712 N-Channel UltraFET Trench MOSFET
April 2007
FDA2712
N-Channel UltraFET Trench MOSFET
250V, 64A, 34mΩ Features
...
|
Datasheet
|
FDA2712
|
Overview
FDA2712 N-Channel UltraFET Trench MOSFET
April 2007
FDA2712
N-Channel UltraFET Trench MOSFET
250V, 64A, 34mΩ Features
• • • • • • RDS(on) = 29.
2mΩ @VGS = 10 V, ID = 40A Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability RoHS compliant
UltraFET
tm
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Applications
• PDP application
D
G G DS
TO-3PN
S
MOSFET Maximum Ratings
Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Paramet...
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