Part Number
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TC58NVG6T2FTA00 |
Manufacturer
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Toshiba |
Description
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64 GBIT (8G X 8 BIT) CMOS NAND E2PROM |
Published
|
Feb 1, 2014 |
Detailed Description
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TOSHIBA CONFIDENTIAL
TENTATIVE
TC58NVG6T2FTA00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
64 GBIT (8G...
|
Datasheet
|
TC58NVG6T2FTA00
|
Overview
TOSHIBA CONFIDENTIAL
TENTATIVE
TC58NVG6T2FTA00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
64 GBIT (8G 8 BIT) CMOS NAND E PROM (Triple-Level-Cell) DESCRIPTION
The TC58NVG6T2FTA00 is a single 3.
3 V 64 Gbit (79,054,700,544 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 1024) bytes 258 pages 4156 blocks.
The device has four 9216-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 9216-byte increments.
The Erase operation is implemented in a single block unit (2064 Kbytes 258 Kbytes:9216 bytes x 258 pages).
The TC58NVG6T2FTA00 is a serial-type m...
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