BSX26
HIGH-SPEED SATURATED SWITCH
DESCRIPTION The BSX26 is a silicon planar epitaxial
NPN transistor in Jedec TO-18 metal case.
It is designed for switching applications up to 500 mA.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CES V CEO V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C at T c as e ≤ 100 °C Storage and Junction Temperature Value 40 40 15 4 500 0.
36 1.
2 0.
68 – 65 to 200 Unit V V V V mA W W W °C 1/6
T s t g, T j
November 1988
Free Datasheet http://www.
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