Power
Transistors
2SB1416
Silicon
PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SD2136
3.
8±0.
2
Unit: mm
7.
5±0.
2 4.
5±0.
2
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Allowing automatic insertion with radial taping
10.
8±0.
2
0.
65±0.
1 2.
5±0.
1
0.
85±0.
1 1.
0±0.
1 0.
8 C
90˚
0.
8 C
16.
0±1.
0
0.
7±0.
1 0.
7±0.
1 1.
15±0.
2 1.
15±0.
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temp...