FDA59N25 250V N-Channel MOSFET
September 2005
UniFET
FDA59N25
250V N-Channel MOSFET
Features
• 59A, 250V, RDS(on) = 0.
049Ω @VGS = 10 V • Low gate charge (typical 63 nC) • Low Crss (typical 70 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
TM
VDS = 250V VDS(Avalanche) = 300V RDS(on) Typ.
@10V = 41mΩ
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are w...