PD - 97576
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
• • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution Lead Free Package
C
IRGP4066DPbF IRGP4066D-EPbF
VCES = 600V IC(Nominal) = 75A
G E
tSC ≥ 5μs, TJ(max) = 175°C
n-channel
VCE(on) typ.
= 1.
70V
Benefits
• High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability...