Part Number
|
AP4957AGM |
Manufacturer
|
Advanced Power Electronics |
Description
|
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
Feb 10, 2014 |
Detailed Description
|
AP4957AGM
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Simple Drive Requirement
D1 D2 ...
|
Datasheet
|
AP4957AGM
|
Overview
AP4957AGM
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Simple Drive Requirement
D1 D2 D1 D2
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
G2 S2
-30V 26mΩ -7.
4A
▼ Dual P MOSFET Package
SO-8
S1 G1
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1 D2
G1 S1
G2 S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1 3 3
Rating -30 ±20 -7.
4 -5.
9 -30 2 -55 to 150 -55 to 150
Units V V...
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