Part Number
|
HY1506I |
Manufacturer
|
HOOYI |
Description
|
N-Channel MOSFET |
Published
|
Feb 11, 2014 |
Detailed Description
|
HY1506P/U/I
N-Channel Enhancement Mode MOSFET
Features
• • • •
60V/55A,
RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rat...
|
Datasheet
|
HY1506I
|
Overview
HY1506P/U/I
N-Channel Enhancement Mode MOSFET
Features
• • • •
60V/55A,
RDS(ON)=10.
5 mΩ (typ.
) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
G
D
Pin Description
S D
S
G
S D G
TO-220
I-PAK(TO-251)
D
TO-262
Applications
•
Power Management for Inverter Systems.
G
S
N-Channel MOSFET
Ordering and Marking Information
Package Code
P HY1506
ÿ YYWWJ G
U I HY1506 HY1506
ÿ YYWWJ G ÿ YYWWJ G
P : TO220-3L D : I-PAK Date Code YYWW Assembly Material G : Lead Free Device
I : TO262-3L
Note:
HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant wi...
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