HGTP2N120BND, HGT1S2N120BNDS
Data Sheet January 2000 File Number 4698.
2
12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs.
They are new members of the MOS gated high voltage switching IGBT family.
IGBTs combine the best features of MOSFETs and bipolar
transistors.
This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
transistor.
The IGBT used is the development type TA49312.
The Diode used is the development type TA49056.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses...