HGTP2N120CND, HGT1S2N120CNDS
Data Sheet January 2000 File Number 4681.
2
13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through (NPT) IGBT designs.
They are new members of the MOS gated high voltage switching IGBT family.
IGBTs combine the best features of MOSFETs and bipolar
transistors.
This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
transistor.
The IGBT used is the development type TA49313.
The Diode used is the development type TA49056 (Part number RHRD4120).
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies wh...