TM
HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4
Data Sheet June 2000 File Number 4826.
2
600V, SMPS Series N-Channel IGBT
The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar
transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential.
This device has been optimized for high frequency switch mode power...