Part Number
|
HGT4E30N60B3DS |
Manufacturer
|
Fairchild Semiconductor |
Description
|
60A/ 600V/ UFS Series N-Channel IGBT |
Published
|
Mar 23, 2005 |
Datasheet
|
HGT4E30N60B3DS
|
Features
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use...
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