HGTA32N60E2
April 1995
32A, 600V N-Channel IGBT
Package
JEDEC MO-093AA (5 LEAD TO-218)
5 EMITTER COLLECTOR (FLANGE) 4 EMITTER KELVIN 3 COLLECTOR 2 NO CONNECTION 1 GATE
Features
• 32A, 600V • Latch Free Operation • Typical Fall Time 620ns • High Input Impedance • Low Conduction Loss
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar
transistors.
The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
transistor.
The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
IGBTs are ideal for many high voltage switching applications operating at frequencie...