HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S
March 1997
10A, 400V and 500V N-Channel IGBTs
Packages
HGTD10N40F1, HGTD10N50F1 JEDEC TO-251AA
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
Features
• 10A, 400V and 500V • VCE(ON) 2.
5V Max.
• TFALL ≤1.
4µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance
Applications
• Power Supplies • Motor Drives • Protective Circuits
COLLECTOR (FLANGE) GATE EMITTER
HGTD10N40F1S, HGTD10N50F1S JEDEC TO-252AA
Description
The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar
transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regul...