HGTG34N100E2
April 1995
34A, 1000V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE
Features
• 34A, 1000V • Latch Free Operation • Typical Fall Time - 710ns • High Input Impedance • Low Conduction Loss
COLLECTOR (BOTTOM SIDE METAL)
Description
The HGTG34N100E2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar
transistors.
The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
transistor.
The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
The IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low c...