HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS
Data Sheet January 2000 File Number 4597.
2
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs.
They are new members of the MOS gated high voltage switching IGBT family.
IGBTs combine the best features of MOSFETs and bipolar
transistors.
This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar
transistor.
The IGBT used is the development type TA49308.
The Diode used is the development type TA49058 (Part number RHRD6120).
The IGBT is ideal for many high voltage switching applications operating...