HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
April 1995
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
Package
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
Features
• 10A, 400V and 500V • VCE(ON): 2.
5V Max.
• TFALL: 1µs, 0.
5µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • Anti-Parallel Diode
Applications
• Power Supplies • Motor Drives • Protective Circuits
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
Description
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar
transistors (IGBTs) designed for high voltage, low on-dissipation applications such as s...