HGTP10N40F1D, HGTP10N50F1D
April 1995
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
Package
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
Features
• 10A, 400V and 500V • Latch Free Operation • Typical Fall Time 1.
4µs • High Input Impedance • Low Conduction Loss • Anti-Parallel Diode • tRR 60ns
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar
transistors.
The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
transistor.
The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
The diode used in parallel with ...