isc Silicon
NPN Power
Transistors
BD501/B
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 50V(Min) 80V(Min)
·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD501
55
VCBO
Collector-Base Voltage
V
BD501B
85
BD501
50
VCEO
Collector-Emitter Voltage
V
BD501B
80
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Ra...