HGTG5N120BND, HGTP5N120BND
Data Sheet May 2003
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
The HGTG5N120BND and HGTP5N120BND are NonPunch Through (NPT) IGBT designs.
They are new members of the MOS gated high voltage switching IGBT family.
IGBTs combine the best features of MOSFETs and bipolar
transistors.
This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
transistor.
The IGBT used is the development type TA49308.
The Diode used is the development type TA49058 (Part number RHRD6120).
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses ar...