HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS
Data Sheet January 2000 File Number 4598.
2
25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through (NPT) IGBT designs.
They are new members of the MOS gated high voltage switching IGBT family.
IGBTs combine the best features of MOSFETs and bipolar
transistors.
This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
transistor.
The IGBT used is developmental type TA49309.
The diode used in anti-parallel is developmental type TA49058.
The IGBT is ideal for many high voltage switching applications operating at moderat...