| Part Number | P50N03LDG |
| Manufacturer | Niko-Sem |
| Title | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Description | NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P50N03LDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 27 RDS(ON)... |
| Features |
°C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS =...
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| File Size | 304.73KB |
| Datasheet |
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P50N03LD : NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P50N03LD TO-252 (DPAK) D PRODUCT SUMMARY V(BR)DSS RDS(ON) 27 12mΩ ID 50A G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH Repetitive Avalanche Energy2 L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) VGS ID IDM IAR EAS EAR PD Tj, Tstg TL 1. GATE 2. DRAIN 3. SOURCE LIMITS ±20 50 35 150 33 250 8.6 50 30 -55 to 150 275 .