P-Channel Enhancement Mode Field Effect
Transistor FEATURES
-30V, -33A, RDS(ON) = 18mΩ @VGS = -10V.
RDS(ON) = 30mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
CED4311/CEU4311
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -30
Units V V A A W W/ C C
±20
-33 -100 36 0.
29 -55 to 150
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating...