HF10N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.
85 Ω )@VGS=10V Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ● 2.
Drain ◀ 1.
Gate ▲ ● ● 3.
Source General Description This Power MOSFET is produced using Wisdom ’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TO-220F 1 2 3 Absolute Maximum...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)