MJE340G
Plastic Medium-Power
NPN Silicon
Transistor
This device is useful for high−voltage general purpose applications.
Features
• Suitable for Transformerless, Line−Operated Equipment • High Power Dissipation Rating for High Reliability • These Devices are Pb−Free and are RoHS Compliant* • Complementary to MJE350
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Total Power Dissipation
@ TC = 25_C Derate above 25_C
VCEO VEB IC PD
300 Vdc 3.
0 Vdc 500 mAdc
20 W 0.
16 mW/_C
Operating and Storage Junction Temperature Range
TJ, Tstg –65 to +150 _C
Stresses exceeding those listed in the Maximum Ratings table may dama...