PD - 97404
INSULATED GATE BIPOLAR
TRANSISTOR Features
• • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package
IRGP4063PbF IRGP4063-EPbF
C
VCES = 600V IC = 48A, TC = 100°C
G E
tSC ≥ 5μs, TJ(max) = 175°C
n-channel
C
VCE(on) typ.
= 1.
65V
Benefits
• High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing...