IPD090N03LGE8177
MOSFET
OptiMOSª3Power-
Transistor,30V
Features
•FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Avalancherated •Pb-freeplating
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max
9
mΩ
ID
40
A
DPAK
tab
2 1
3
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPD090N03L G E8177
Package PG-TO252-3
Marking 090N03L
RelatedLinks -
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.
2.
1,2020-09-14
OptiMOSª3Power-Trans...