BSS138AKA
6 February 2013
SO T2 3
60 V, single N-channel Trench MOSFET
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits
• • • • •
Very fast switching Trench MOSFET technology ESD protection Low threshold voltage AEC-Q101 qualified
3.
Applications
• • • •
Relay driver High-speed line driver Low-side loadswitch Switching circuits
4.
Quick reference data
Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID ...