HM6N70/F
General Description：
HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The
transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220, TO-220Fwhich accords with the RoHS standard.
VDSS ID PD(TC=25℃ ) RDS(ON)Typ 700 6 85 1.
8 V A W Ω
Features：
l Fast Switching l Low ON Resistance(Rdson≤2.
2Ω) l Low Gate Charge
(Typical Data:18.
6nC)
TO-220) G D S TO-220 G D S
l Low Reverse transfer capacitances(Typical:6.
6pF) l 100% Single Pulse avalanche ...