CAS100H12AM1
1.
2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode
Features Package
VDS 1.
2 kV RDS(on) (TJ = 25˚C) EOFF (TJ = 125˚C) 16 mΩ 1.
8 mJ
• • • • • • • • • • • • • • • •
Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) AlSiC Baseplate, AMB Si3N4 Substrate
System Benefits
Enables Compact and Lightweight Systems High Efficiency Operation Ease of
Transistor Gate Control Reduced Cooling Requirements Reduced System Cost
Applications
High Power Converters Motor Drives Solar Inverters UPS and SMPS...