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INCHANGE Semiconductor
isc Product Specification
isc Silicon
PNP Power
Transistor
2SA1659
DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) ·Complement to Type 2SC4370 ·Full-mold package that does not require an insulating board or bushing when mounting.
APPLICATIONS ·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5.
0
V
IC(DC)
Collector Current(DC)
-1.
5
A
IB(DC)
Base Current Collector Power Dissipation @TC=25℃ Junction Temperature
-0.
15
A
PC
20
W ℃
TJ
150
Tstg
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