Part Number
|
NT5CB512M8BN |
Manufacturer
|
Nanya |
Description
|
4Gb DDR3 SDRAM B-Die |
Published
|
Mar 22, 2014 |
Detailed Description
|
4Gb DDR3 SDRAM B-Die
NT5CB1024M4BN / NT5CB512M8BN / NT5CB256M16BP NT5CC1024M4BN / NT5CC512M8BN / NT5CC256M16BP
Feature
...
|
Datasheet
|
NT5CB512M8BN
|
Overview
4Gb DDR3 SDRAM B-Die
NT5CB1024M4BN / NT5CB512M8BN / NT5CB256M16BP NT5CC1024M4BN / NT5CC512M8BN / NT5CC256M16BP
Feature
VDD = VDDQ = 1.
5V ± 0.
075V (JEDEC Standard Power Supply) VDD = VDDQ = 1.
35V -0.
0675V/+0.
1V (Backward Compatible to VDD = VDDQ = 1.
5V ±0.
075V) 8 Internal memory banks (BA0- BA2) Differential clock input (CK, ) Programmable Latency: 5, 6, 7, 8, 9, 10, 11 WRITE Latency (CWL): 5,6,7,8,9 POSTED CAS ADDITIVE Programmable Additive Latency (AL): 0, CL-1, CL-2 clock Programmable Sequential / Interleave Burst Type Programmable Burst Length: 4, 8 Through ZQ pin (RZQ:240 ohm±1%) 8n-bit prefetch architecture Output Driver Impedance Control Different...
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