FQPF9N25C / FQPF9N25CT — N-Channel QFET® MOSFET
November 2013
FQPF9N25C / FQPF9N25CT
N-Channel QFET® MOSFET
250 V, 8.
8 A, 430 mΩ Features
• 8.
8 A, 250 V, RDS(on) = 430 mΩ (Max.
) @ VGS = 10 V, ID = 4.
4 A • Low Gate Charge (Typ.
26.
5 nC) • Low Crss (Typ.
45.
5 pF) • 100% Avalanche Tested
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching D...