HS1010E
N channel 60V MOSFET
1.
Description The HS1010E is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
2.
Feature ● RDS(ON)≦9mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability VDS RDS(on) ID 60 9 85 V mΩ A
3.
Pin configuration
Order Number HS1010E
Package TO-220
TO-220
Coperight@ Guangzhou Chengqi Semiconductor Co.
,LTD.
All rights reserved.
Oct,2012-Ver1.
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HS1010E
N channel 60V MOSFET
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