PD - 97479
INSULATED GATE BIPOLAR
TRANSISTOR Features
• • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free
IRG7PH35UPbF IRG7PH35U-EP
C
VCES = 1200V I NOMINAL = 20A
G E
TJ(max) = 175°C
n-channel
C
VCE(on) typ.
= 1.
9V
Benefits
• High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation
C
GC
E
Applications
• • ...