IRG7PH44K10DPbF IRG7PH44K10D-EPbF
Insulated Gate Bipolar
Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 40A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ.
= 1.
9V @ IC = 25A
G E
C
G
G
n-channel
Applications • Industrial Motor Drive • UPS G Gate
G IRG7PH44K10DPbF TO‐247AC C Collector
C
E
C
E
G IRG7PH44K10D‐EPbF TO‐247AD E Emitter
Features
Low VCE(ON) and switching losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH44K10DPBF IRG7PH44K10D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ ...