IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF
Insulated Gate Bipolar
Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 10A, TC = 100°C
tsc 5µs, Tjmax = 175°C
G E
E G D-Pak IRGR4610DPbF G D2-Pak IRGS4610DPbF
C
C
C
C
E G
C
E
VCE(on) typ.
= 1.
7V @ 6A
n-channel
G
TO-220AB IRGB4610DPbF
C
E
Applications • Appliance Drives • Inverters • UPS
Features Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS compliant
G ate
C ollector
Em itter
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Benefits High efficiency in a wide range of applications and switching frequencies Improv...